Invention Grant
- Patent Title: Mechanisms for growing epitaxy structure of finFET device
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Application No.: US17885155Application Date: 2022-08-10
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Publication No.: US11949015B2Publication Date: 2024-04-02
- Inventor: Szu-Chi Yang , Chih-Hsiang Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L21/8238 ; H01L29/08 ; H01L29/165 ; H01L29/66
Abstract:
A method includes following steps. A semiconductor fin is formed extending from a substrate. A gate structure is formed extending across the semiconductor fin. Recesses are etched in the semiconductor fin. Source/drain epitaxial structures are formed in the recesses in the semiconductor fin. Formation of each of the source/drain epitaxial structures comprises performing a first epitaxy growth process to form a bar-shaped epitaxial structure in one of the recesses, and performing a second epitaxy growth process to form a cladding epitaxial layer cladding on the bar-shaped epitaxial structure. The bar-shaped epitaxial structure has a lower phosphorous concentration than the cladding epitaxial layer.
Public/Granted literature
- US20220384655A1 MECHANISMS FOR GROWING EPITAXY STRUCTURE OF FINFET DEVICE Public/Granted day:2022-12-01
Information query
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