Invention Grant
- Patent Title: Iterative error correction in memory systems
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Application No.: US17843171Application Date: 2022-06-17
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Publication No.: US11949428B2Publication Date: 2024-04-02
- Inventor: Marco Sforzin , Di Hsien Ngu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wood IP LLC
- Main IPC: H03M13/09
- IPC: H03M13/09 ; H03K19/173 ; H03M13/11

Abstract:
A system and method for detecting and correcting memory errors in CXL components is presented. The method includes receiving, into a decoder, a memory transfer block (MTB), wherein the MTB comprises data and parity information, wherein the MTB is arranged in a first dimension and a second dimension. An error checking and a correction function on the MTB is performed using a binary hamming code logic within the decoder in the first dimension. An error checking and a correction function on the MTB is performed using a non-binary hamming code logic within the decoder in the second dimension. Further, the binary hamming code logic and the non-binary hamming code logic perform the error checking on the MTB simultaneously.
Public/Granted literature
- US20230231573A1 ITERATIVE ERROR CORRECTION IN MEMORY SYSTEMS Public/Granted day:2023-07-20
Information query
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