Invention Grant
- Patent Title: Ferroelectric capacitors, transistors, memory devices, and methods of manufacturing ferroelectric devices
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Application No.: US17078672Application Date: 2020-10-23
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Publication No.: US11950429B2Publication Date: 2024-04-02
- Inventor: Sanghun Jeon
- Applicant: Samsung Electronics Co., Ltd. , KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.,Korea Advanced Institute of Science and Technology
- Current Assignee: Samsung Electronics Co., Ltd.,Korea Advanced Institute of Science and Technology
- Current Assignee Address: KR Gyeonggi-do; KR Daejeon
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20190178508 2019.12.30
- Main IPC: H10B53/00
- IPC: H10B53/00 ; G11C11/22 ; H01L29/51 ; H01L29/78 ; H10B53/20
Abstract:
The present invention relates to ferroelectric capacitors, transistors, memory device, and method of manufacturing ferroelectric devices. The ferroelectric capacitor includes a first electrode, a second electrode facing the first electrode, a ferroelectric layer between the first electrode and the second electrode, and an interfacial layer between the ferroelectric layer and the first electrode or between the ferroelectric layer and the second electrode. The ferroelectric layer includes hafnium-based oxide. The interfacial layer includes HfO2.
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