Invention Grant
- Patent Title: Memory cell, capacitive memory structure, and methods thereof
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Application No.: US17085141Application Date: 2020-10-30
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Publication No.: US11950430B2Publication Date: 2024-04-02
- Inventor: Stefan Ferdinand Müller , Patrick Polakowski
- Applicant: Ferroelectric Memory GmbH
- Applicant Address: DE Dresden
- Assignee: Ferroelectric Memory GmbH
- Current Assignee: Ferroelectric Memory GmbH
- Current Assignee Address: DE Dresden
- Agency: Black McCuskey
- Main IPC: H10B53/30
- IPC: H10B53/30 ; H01L49/02

Abstract:
According to various aspects, a memory cell is provided, the memory cell including: a first electrode; a second electrode; and a memory structure disposed between the first electrode and the second electrode, the first electrode, the second electrode, and the memory structure forming a memory capacitor, wherein at least one of the first electrode or the second electrode includes: a first electrode layer including a first material having a first microstructure; a functional layer in direct contact with the first electrode layer; and a second electrode layer in direct contact with the functional layer, the second electrode layer including a second material having a second microstructure different from the first microstructure.
Public/Granted literature
- US20220139937A1 MEMORY CELL, CAPACITIVE MEMORY STRUCTURE, AND METHODS THEREOF Public/Granted day:2022-05-05
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