A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.