Invention Grant
- Patent Title: Method for manufacturing etched SiC substrate and grown SiC substrate by material tranportation and method for epitaxial growth by material transportation
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Application No.: US17606738Application Date: 2020-04-24
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Publication No.: US11952678B2Publication Date: 2024-04-09
- Inventor: Tadaaki Kaneko
- Applicant: KWANSEI GAKUIN EDUCATIONAL FOUNDATION , TOYOTA TSUSHO CORPORATION
- Applicant Address: JP Hyogo
- Assignee: KWANSEI GAKUIN EDUCATIONAL FOUNDATION,TOYOTA TSUSHO CORPORATION
- Current Assignee: KWANSEI GAKUIN EDUCATIONAL FOUNDATION,TOYOTA TSUSHO CORPORATION
- Current Assignee Address: JP Hyogo; JP Nagoya
- Agency: Calfee, Halter & Griswold LLP
- Priority: JP 2019086713 2019.04.26
- International Application: PCT/JP2020/017642 2020.04.24
- International Announcement: WO2020/218482A 2020.10.29
- Date entered country: 2021-10-26
- Main IPC: C30B23/06
- IPC: C30B23/06 ; C30B25/10 ; C30B25/20 ; C30B29/36
Abstract:
The present invention addresses the problem of providing a novel method for manufacturing a SiC substrate, and a manufacturing device for said method. The present invention realizes: a method for manufacturing a SiC substrate, comprising heating two mutually opposing SiC single-crystal substrates and transporting a raw material from one SiC single-crystal substrate to the other SiC single-crystal substrate; and a manufacturing device for said method. Through the present invention, each of the mutually opposing SiC single-crystal substrate surfaces can be used as a raw material for crystal growth of the other SiC single-crystal substrate surface, and it is therefore possible to realize a highly economical method for manufacturing a SiC substrate.
Public/Granted literature
- US20220213615A1 METHOD FOR MANUFACTURING SIC SUBSTRATE, MANUFACTURING DEVICE FOR SAME, AND METHOD FOR EPITAXIAL GROWTH Public/Granted day:2022-07-07
Information query
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