Invention Grant
- Patent Title: Glass electrochemical sensor with wafer level stacking and through glass via (TGV) interconnects
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Application No.: US18122192Application Date: 2023-03-16
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Publication No.: US11953462B2Publication Date: 2024-04-09
- Inventor: Robert Alan Bellman , Jeffrey Stapleton King , Scott Christopher Pollard
- Applicant: CORNING INCORPORATED
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent Svetlana Short
- The original application number of the division: US16608500
- Main IPC: G01N27/404
- IPC: G01N27/404 ; C03B33/02 ; C03C15/00 ; C03C17/06 ; C03C23/00 ; C03C27/10 ; G01N27/406 ; G01N27/413

Abstract:
A method of forming a glass electrochemical sensor is described. In some embodiments, the method may include forming a plurality of electrical through glass vias (TGVs) in an electrode substrate; filling each of the plurality of electrical TGVs with an electrode material; forming a plurality of contact TGVs in the electrode substrate; filling each of the plurality of contact TGVs with a conductive material; patterning the conductive material to connect the electrical TGVs with the contact TGVs; forming a cavity in a first glass layer; and bonding a first side of the first glass layer to the electrode substrate.
Public/Granted literature
- US20230221278A1 GLASS ELECTROCHEMICAL SENSOR WITH WAFER LEVEL STACKING AND THROUGH GLASS VIA (TGV) INTERCONNECTS Public/Granted day:2023-07-13
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