Glass electrochemical sensor with wafer level stacking and through glass via (TGV) interconnects
Abstract:
A method of forming a glass electrochemical sensor is described. In some embodiments, the method may include forming a plurality of electrical through glass vias (TGVs) in an electrode substrate; filling each of the plurality of electrical TGVs with an electrode material; forming a plurality of contact TGVs in the electrode substrate; filling each of the plurality of contact TGVs with a conductive material; patterning the conductive material to connect the electrical TGVs with the contact TGVs; forming a cavity in a first glass layer; and bonding a first side of the first glass layer to the electrode substrate.
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