Invention Grant
- Patent Title: MI sensor and method for manufacturing MI sensor
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Application No.: US17043768Application Date: 2019-05-21
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Publication No.: US11953562B2Publication Date: 2024-04-09
- Inventor: Tatsufumi Kusuda
- Applicant: NIDEC-READ CORPORATION
- Applicant Address: JP Kyoto
- Assignee: NIDEC-READ CORPORATION
- Current Assignee: NIDEC-READ CORPORATION
- Current Assignee Address: JP Muko
- Agency: VIERING, JENTSCHURA & PARTNER MBB
- Priority: JP 18121668 2018.06.27
- International Application: PCT/JP2019/020076 2019.05.21
- International Announcement: WO2020/003815A 2020.01.02
- Date entered country: 2020-09-30
- Main IPC: G01R33/06
- IPC: G01R33/06 ; H01F27/28 ; H01F41/04

Abstract:
An MI sensor includes: an amorphous wire; an insulator layer formed on an outer peripheral surface of the amorphous wire; and an X-axis coil, a Y-axis coil, and a Z-axis coil which are formed, in a spiral shape, on an outer peripheral surface of the insulator layer. The X-axis coil, the Y-axis coil, and the Z-axis coil are formed of a conductive layer, and the X-axis coil, the Y-axis coil, and the Z-axis coil are arranged in directions orthogonal to each other.
Public/Granted literature
- US20210109169A1 MI SENSOR AND METHOD FOR MANUFACTURING MI SENSOR Public/Granted day:2021-04-15
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