Invention Grant
- Patent Title: Reflective mask blank for EUV lithography, reflective mask for EUV lithography, and method for manufacturing same
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Application No.: US18198881Application Date: 2023-05-18
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Publication No.: US11953822B2Publication Date: 2024-04-09
- Inventor: Hirotomo Kawahara , Daijiro Akagi , Hiroaki Iwaoka , Toshiyuki Uno , Michinori Suehara , Keishi Tsukiyama
- Applicant: AGC INC.
- Applicant Address: JP Tokyo
- Assignee: AGC INC.
- Current Assignee: AGC INC.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 21022583 2021.02.16
- Main IPC: G03F1/32
- IPC: G03F1/32 ; G03F1/24 ; G03F1/48
Abstract:
The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
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