Invention Grant
- Patent Title: Bias generating devices and methods for generating bias
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Application No.: US17238064Application Date: 2021-04-22
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Publication No.: US11953927B2Publication Date: 2024-04-09
- Inventor: Perng-Fei Yuh , Yoshitaka Yamauchi , Yih Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT Law
- Agent Anthony King
- Main IPC: G05F3/26
- IPC: G05F3/26 ; G05F3/24
Abstract:
The present disclosure provides a bias generating device and a method for generating bias. A bias generating device includes a first diode-connected transistor pair connected to receive a first voltage; a second diode-connected transistor pair connected to receive a second voltage; and a first transistor pair connected to the first diode-connected transistor pair and the second diode-connected transistor pair. The first transistor pair is configured to generate a third voltage in response to the first voltage and the second voltage.
Public/Granted literature
- US20220342436A1 BIAS GENERATING DEVICES AND METHODS FOR GENERATING BIAS Public/Granted day:2022-10-27
Information query
IPC分类:
