Invention Grant
- Patent Title: Nonvolatile memory device, nonvolatile memory, and operation method of memory controller
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Application No.: US17234925Application Date: 2021-04-20
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Publication No.: US11954340B2Publication Date: 2024-04-09
- Inventor: Bong-Kil Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR 20200109952 2020.08.31
- Main IPC: G06F3/00
- IPC: G06F3/00 ; G06F3/06

Abstract:
Disclosed is a nonvolatile memory, which includes a plurality of input/output pads connectable to a plurality of data lines, an enable input pad, an enable output pad, and a chip address initialization circuit. The chip address initialization circuit receives a current chip address through the plurality of input/output pads, stores the current chip address in response to a current enable signal received through the enable input pad, outputs a next enable signal through the enable output pad, and outputs a next chip address through the plurality of input/output pads.
Public/Granted literature
- US20220066667A1 NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY, AND OPERATION METHOD OF MEMORY CONTROLLER Public/Granted day:2022-03-03
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