Invention Grant
- Patent Title: Integrated artificial neuron device
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Application No.: US17572899Application Date: 2022-01-11
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Publication No.: US11954589B2Publication Date: 2024-04-09
- Inventor: Philippe Galy , Thomas Bedecarrats
- Applicant: STMicroelectronics SA
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Crowe & Dunlevy LLC
- Priority: FR 52383 2017.03.23
- Main IPC: G06N3/063
- IPC: G06N3/063 ; G06N3/04 ; G06N3/049 ; G06N3/065 ; G11C11/54 ; H01L27/02 ; H01L29/423 ; H03K3/356

Abstract:
An artificial-neuron device includes an integration-generation circuit coupled between an input at which an input signal is received and an output at which an output signal is delivered, and a refractory circuit inhibiting the integrator circuit after the delivery of the output signal. The refractory circuit is formed by a first MOS transistor having a first conduction-terminal coupled to a supply node, a second conduction-terminal coupled to a common node, and a control-terminal coupled to the output, and a second MOS transistor having a first conduction-terminal coupled to the input, a second conduction-terminal coupled to a reference node at which a reference voltage is received, and a control-terminal coupled to the common node. A resistive-capacitive circuit is coupled between the supply node and the reference node and having a tap coupled to the common node, with the inhibition duration being dependent upon a time constant of the resistive-capacitive circuit.
Public/Granted literature
- US20220138530A1 INTEGRATED ARTIFICIAL NEURON DEVICE Public/Granted day:2022-05-05
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