Invention Grant
- Patent Title: Memory device and computing method using the same
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Application No.: US17819370Application Date: 2022-08-12
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Publication No.: US11955168B2Publication Date: 2024-04-09
- Inventor: Yun-Yuan Wang , Ming-Hsiu Lee
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C11/408 ; G11C11/4094 ; G11C11/4096

Abstract:
A memory device is provided. The memory device includes a memory array of a plurality of memory elements, a plurality of word lines or word line pairs, a plurality of bit line pairs, and a plurality of common source lines. Each of the memory elements includes two memory cells. The memory device is configured for calculating an energy value based on a plurality of state signals and a plurality of coefficients, and the two memory cells of each of the memory elements are configured for performing an individual selection such that one of the two memory cells of each of the memory elements receives two corresponding state signals from a corresponding word line or a corresponding word line pair and a corresponding bit line pair and generates an output current into a corresponding common source line for calculating the energy value.
Public/Granted literature
- US20230368836A1 MEMORY DEVICE AND COMPUTING METHOD USING THE SAME Public/Granted day:2023-11-16
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