Invention Grant
- Patent Title: Microelectronic devices including an interdeck region between deck structures, and related electronic devices
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Application No.: US17804978Application Date: 2022-06-01
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Publication No.: US11955330B2Publication Date: 2024-04-09
- Inventor: John D. Hopkins , Damir Fazil
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- The original application number of the division: US16789168 2020.02.12
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/311
Abstract:
A method of forming a microelectronic device comprises forming openings in an interdeck region and a first deck structure, the first deck structure comprising alternating levels of a first insulative material and a second insulative material, forming a first sacrificial material in the openings, removing a portion of the first sacrificial material from the interdeck region to expose sidewalls of the first insulative material and the second insulative material in the interdeck region, removing a portion of the first insulative material and the second insulative material in the interdeck region to form tapered sidewalls in the interdeck region, removing remaining portions of the first sacrificial material from the openings, and forming at least a second sacrificial material in the openings. Related methods of forming a microelectronic devices and related microelectronic devices are disclosed.
Public/Granted literature
Information query
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