Invention Grant
- Patent Title: Substrate processing apparatus
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Application No.: US17141670Application Date: 2021-01-05
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Publication No.: US11955352B2Publication Date: 2024-04-09
- Inventor: Hiroki Sakurai , Daisuke Goto , Takashi Nakazawa , Yusuke Takamatsu , Yusuke Hashimoto
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JP 20000926 2020.01.07
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/687

Abstract:
A substrate processing apparatus includes: a temperature raising part for raising a temperature of a first sulfuric acid; a mixing part for mixing the first sulfuric acid where the temperature is raised by the temperature raising part with a moisture-containing liquid to generate a mixed solution; and a discharging part for discharging the mixed solution onto a substrate inside a substrate processing part. The mixing part includes: a joining portion where a sulfuric acid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part flows and a liquid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part and the moisture-containing liquid flows are joined; and a reaction suppression mechanism for suppressing a reaction between the first sulfuric acid and the moisture-containing liquid in the joining portion.
Public/Granted literature
- US20210210363A1 SUBSTRATE PROCESSING APPARATUS Public/Granted day:2021-07-08
Information query
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