Invention Grant
- Patent Title: Film formation apparatus
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Application No.: US17474403Application Date: 2021-09-14
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Publication No.: US11955367B2Publication Date: 2024-04-09
- Inventor: Shohei Tanabe , Koji Yoshimura , Ryo Matsuhashi
- Applicant: Shibaura Mechatronics Corporation
- Applicant Address: JP Yokohama
- Assignee: SHIBAURA MECHATRONICS CORPORATION
- Current Assignee: SHIBAURA MECHATRONICS CORPORATION
- Current Assignee Address: JP Yokoshima
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Stanley N. Protigal
- Priority: JP 20154720 2020.09.15
- Main IPC: H01L21/687
- IPC: H01L21/687 ; H01J37/32 ; H01J37/34 ; H01L21/02

Abstract:
A film deposition apparatus reduces hillock formation while yielding uniform film thickness distribution. A film deposition apparatus of a present embodiment includes: a chamber; a rotary table that circulates and carries a workpiece W along a circumferential transfer path L; multiple targets that contain a film deposition material, and that are provided in positions at different radial distances from a center of rotation of the rotary table; a shield member that forms a film deposition chamber surrounding a region where the film deposition material scatters, and that has an opening on the side facing the circulated and carried workpiece; and a plasma generator that includes a sputter gas introduction unit for introducing a sputter gas into the film deposition chamber, and a power supply unit for applying power to the target, and that generates plasma in the sputter gas G1 in the film deposition chamber.
Public/Granted literature
- US20220084871A1 FILM FORMATION APPARATUS Public/Granted day:2022-03-17
Information query
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