Invention Grant
- Patent Title: System and method for measuring device inside through-silicon via surroundings
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Application No.: US17318388Application Date: 2021-05-12
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Publication No.: US11955392B2Publication Date: 2024-04-09
- Inventor: Shuo-Wen Chang , Yu-Hsien Li , Min-Tar Liu , Yuan-Yao Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: FOLEY & LARDNER LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01R31/28 ; H01L23/538

Abstract:
One aspect of this description relates to a testing apparatus including an advance process control monitor (APCM) in a first wafer, a plurality of pads disposed over and coupled to the APCM. The plurality of pads are in a second wafer. The testing apparatus includes a testing unit disposed between the first wafer and the second wafer. The testing unit is coupled to the APCM. The testing unit includes a metal structure within a dielectric. The testing apparatus includes a plurality of through silicon vias (TSVs) extending in a first direction from the first wafer, through the dielectric of the testing unit, to the second wafer.
Public/Granted literature
- US20220367299A1 SYSTEM AND METHOD FOR MEASURING DEVICE INSIDE THROUGH-SILICON VIA SURROUNDINGS Public/Granted day:2022-11-17
Information query
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