Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17766575Application Date: 2020-11-06
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Publication No.: US11955513B2Publication Date: 2024-04-09
- Inventor: Makoto Hashimoto , Koji Yano , Naohiro Shimizu
- Applicant: NISSHINBO MICRO DEVICES INC. , University of Yamanashi
- Applicant Address: JP Tokyo
- Assignee: NISSHINBO MICRO DEVICES INC.,UNIVERSITY OF YAMANASHI
- Current Assignee: NISSHINBO MICRO DEVICES INC.,UNIVERSITY OF YAMANASHI
- Current Assignee Address: JP Tokyo; JP Kofu
- Agency: Oliff PLC
- Priority: JP 19203395 2019.11.08
- International Application: PCT/JP2020/041633 2020.11.06
- International Announcement: WO2021/090944A 2021.05.14
- Date entered country: 2022-04-05
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L29/06 ; H01L29/732 ; H01L29/739 ; H01L29/808

Abstract:
A semiconductor device has a super junction structure and includes a first semiconductor layer of the second conductive type disposed on the first column region and the second column region, a second semiconductor layer of the first conductive type disposed on the first semiconductor layer, a first semiconductor region of the first conductive type that is electrically connected to the first electrode and is disposed in a surface layer portion of the second semiconductor layer to be separated from the first semiconductor layer, and a second semiconductor region of the second conductive type that is electrically connected to the second electrode and that is disposed at least in the surface layer portion of the second semiconductor layer to be separated from the first semiconductor region and is electrically connected to the first semiconductor layer.
Public/Granted literature
- US20230282694A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-09-07
Information query
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