Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17202612Application Date: 2021-03-16
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Publication No.: US11955542B2Publication Date: 2024-04-09
- Inventor: Hsin-Chih Lin , Shin-Cheng Lin , Yung-Hao Lin
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- The original application number of the division: US15852203 2017.12.22
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/10 ; H01L29/20 ; H01L29/205 ; H01L29/423 ; H01L29/66
Abstract:
A semiconductor device is provided. The semiconductor device includes a substrate, a first III-V compound layer disposed on the substrate, a second III-V compound layer disposed on the first III-V compound layer, a p-type doped III-V compound layer disposed on the second III-V compound layer, a gate disposed over the p-type doped III-V compound layer, a source and a drain disposed on opposite sides of the gate, and a dielectric layer disposed between the p-type doped III-V compound layer and the gate. A method for forming the above semiconductor device is also provided.
Public/Granted literature
- US20210226048A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-07-22
Information query
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