Invention Grant
- Patent Title: Memory device and method for manufacturing the same
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Application No.: US17472190Application Date: 2021-09-10
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Publication No.: US11956942B2Publication Date: 2024-04-09
- Inventor: Mutsumi Okajima , Yasuaki Ootera , Tsutomu Nakanishi
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 21049586 2021.03.24
- Main IPC: H10B12/00
- IPC: H10B12/00 ; H01L21/02 ; H01L29/24 ; H01L29/66 ; H01L29/786

Abstract:
According to one embodiment, a device includes: a circuit on a first surface of a substrate and including a first contact; an aluminum oxide layer above the substrate in a first direction perpendicular to the first surface; a cell including a capacitor provided in the aluminum oxide layer; a first conductive layer provided between the substrate and the aluminum oxide layer in the first direction and connected to the cell; a first insulating layer between the first conductive layer and the substrate in the first direction; a second insulating layer adjacent to the aluminum oxide layer in a second direction parallel to the first surface and provided above the substrate in the first direction; and a second contact in the second insulating layer and above the first contact in the first direction to connect the cell to the first contact.
Public/Granted literature
- US20220310613A1 MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-09-29
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