Invention Grant
- Patent Title: Semiconductor integrated circuit
-
Application No.: US17839038Application Date: 2022-06-13
-
Publication No.: US11956951B2Publication Date: 2024-04-09
- Inventor: Takahiro Sugimoto
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP 22035095 2022.03.08
- Main IPC: G11C16/30
- IPC: G11C16/30 ; G11C5/14 ; G11C11/413 ; G11C16/32 ; H10B41/41

Abstract:
According to one embodiment, a semiconductor integrated circuit includes a first circuit that includes a level shift transistor, a transmission line through which the signal output from the first circuit propagates, a second circuit that is connected the transmission line to receive the signal propagating through the transmission line, and a third circuit that is connected to the transmission line. The first circuit is connected to a power supply line to which a first voltage is supplied, and outputs, to the transmission line, a signal having an amplitude lower than the first voltage by a threshold voltage of the level shift transistor. The third circuit allows a current to flow from the transmission line when a voltage of the transmission line exceeds a set voltage.
Public/Granted literature
- US20230292503A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2023-09-14
Information query