A 3-dimensional flash memory device and methods of fabricating and driving the same are provided. The device includes: a channel layer extending over a substrate in a first direction perpendicular to a surface of the substrate; an information storing layer extending along a sidewall of the channel layer in the first direction; control gates each surrounding the channel layer, with the information storing layer between the channel layer and the control gates; an insulating layer being between the control gates in the first direction and separating the control gates from each other; a fixed charge region disposed at an interface of the insulating layer and the information storing layer or in a portion of the information storing layer between the control gates in the first direction; and a doped region induced by the fixed charge region and disposed at a surface of the channel layer facing the fixed charge region.