Invention Grant
- Patent Title: Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices
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Application No.: US17027330Application Date: 2020-09-21
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Publication No.: US11956971B2Publication Date: 2024-04-09
- Inventor: Huanlong Liu , Guenole Jan , Ru-Ying Tong , Jian Zhu , Yuan-Jen Lee , Jodi Mari Iwata , Sahil Patel , Vignesh Sundar
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- Main IPC: H10B61/00
- IPC: H10B61/00 ; H10N50/01 ; H10N50/10 ; H10N50/80 ; H10N50/85

Abstract:
A fabrication process for an STT MTJ MRAM device includes steps of cooling the device at individual or at multiple stages in its fabrication. The cooling process, which may be equally well applied during the fabrication of other multi-layered devices, is demonstrated to produce an operational device that is more resistant to adverse thermal effects during operation that would normally cause a similar device not so fabricated to lose stored data and otherwise fail to operate properly.
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