Invention Grant
- Patent Title: Perovskite light-emitting diode and method of manufacturing the same
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Application No.: US17414003Application Date: 2020-12-23
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Publication No.: US11957036B2Publication Date: 2024-04-09
- Inventor: Yongwei Wu
- Applicant: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicant Address: CN Guangdong
- Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Priority: CN 2010426149.1 2020.05.19
- International Application: PCT/CN2020/138453 2020.12.23
- International Announcement: WO2021/232783A 2021.11.25
- Date entered country: 2021-06-15
- Main IPC: H10K85/50
- IPC: H10K85/50 ; H10K71/00 ; H10K50/11 ; H10K50/15 ; H10K50/16 ; H10K71/40 ; H10K85/30

Abstract:
A perovskite light-emitting diode and a method of manufacturing the same are provided. The method includes steps of providing a substrate, disposing a first electrode layer, a hole transport layer, and a perovskite precursor liquid layer on the substrate, coating the perovskite precursor liquid layer with a first solvent, performing a first thermal process to form a perovskite prefabricated layer, coating the perovskite prefabricated layer with a second solvent, and performing a second thermal process to form a perovskite light-emitting layer.
Public/Granted literature
- US20220310982A1 PEROVSKITE LIGHT-EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2022-09-29
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