Invention Grant
- Patent Title: Method of analyzing semiconductor structure
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Application No.: US17178193Application Date: 2021-02-17
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Publication No.: US11959958B2Publication Date: 2024-04-16
- Inventor: Yi Min Liu , Chien-Yi Chen , Yian-Liang Kuo
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- Main IPC: G01R31/265
- IPC: G01R31/265 ; G01R31/28 ; H01L21/67 ; H01L21/687
Abstract:
A method includes providing a detector disposed above a semiconductor structure; identifying a portion of the semiconductor structure at a temperature substantially greater than a predetermined threshold by the detector; rotating the stage; and deriving a position of the portion of the semiconductor structure based upon the rotation of the stage.
Public/Granted literature
- US20210172995A1 METHOD OF ANALYZING SEMICONDUCTOR STRUCTURE Public/Granted day:2021-06-10
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