Invention Grant
- Patent Title: Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) with low resistivity spin hall effect (SHE) write line
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Application No.: US17331941Application Date: 2021-05-27
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Publication No.: US11961544B2Publication Date: 2024-04-16
- Inventor: Julien Frougier , Dimitri Houssameddine , Ruilong Xie , Kangguo Cheng
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Edward J. Wixted, III
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H10B61/00 ; H10N50/10 ; H10N50/85 ; H10N52/01 ; H10N52/80
Abstract:
Embodiments of the invention include a method for fabricating a magnetoresistive random-access memory (MRAM) structure and the resulting structure. A first type of metal is formed on an interlayer dielectric layer with a plurality of embedded contacts, where the first type of metal exhibits spin Hall effect (SHE) properties. At least one spin-orbit torque (SOT) MRAM cell is formed on the first type of metal. One or more recesses surrounding the at least one SOT-MRAM cell are created by recessing exposed portions of the first type of metal. A second type of metal is formed in the one or more recesses, where the second type of metal has lower resistivity than the first type of metal.
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