Invention Grant
- Patent Title: Hidden writes in a resistive memory
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Application No.: US17447746Application Date: 2021-09-15
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Publication No.: US11961558B2Publication Date: 2024-04-16
- Inventor: Tahmina Akhter , Gilles Joseph Maurice Muller
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G11C13/00
- IPC: G11C13/00

Abstract:
An integrated circuit (IC) device includes a non-volatile memory device with an array of non-volatile memory cells, and an isolation circuit configured to conduct voltage from an internal voltage supply to one of the memory cells during a hidden write operation to the one of the memory cells, and conduct voltage from an external voltage supply to the one of the memory cells during a non-hidden write operation to the one of the memory cells. Current at the external voltage supply can be monitored external to the IC device during the non-hidden write operation, and current of the internal voltage supply is provided by a capacitor that cannot be monitored external to the IC device during the hidden write operation.
Public/Granted literature
- US20230083511A1 HIDDEN WRITES IN A RESISTIVE MEMORY Public/Granted day:2023-03-16
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