Bit line noise suppression and related apparatuses, methods, and computing systems are disclosed. An apparatus includes a complementary metal-oxide-semiconductor (CMOS) wafer and a memory cell wafer. The CMOS wafer includes CMOS wafer contact pads and sense amplifier circuitry electrically connected to some of the CMOS wafer contact pads. The memory cell wafer includes memory cell wafer contact pads and bit lines electrically connected to some of the memory cell wafer contact pads. The bit lines include primary bit lines and secondary bit lines. Each of the secondary bit lines extends in parallel proximate to a corresponding one of the primary bit lines. A cross intersection of a first primary bit line with a first secondary bit line located proximate to a parity intersection of a second primary bit line with a second secondary bit line. The first primary bit line is adjacent to the second primary bit line.