Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17276028Application Date: 2018-11-19
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Publication No.: US11961784B2Publication Date: 2024-04-16
- Inventor: Arata Iizuka , Korehide Okamoto , Ryoya Shirahama
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2018/042615 2018.11.19
- International Announcement: WO2020/105075A 2020.05.28
- Date entered country: 2021-03-12
- Main IPC: H01L23/40
- IPC: H01L23/40 ; H01L23/31 ; H01L23/473 ; H01L23/522

Abstract:
A first heat sink has a first inner surface and a first outer surface, and has a first through hole. A second heat sink has a second inner surface disposed with a clearance left from the first inner surface of the first heat sink, and a second outer surface opposite to the second inner surface, and has a second through hole. A semiconductor element is disposed within a clearance between the first inner surface of the first heat sink and the second inner surface of the second heat sink. A sealing member seals the semiconductor element within the clearance between the first inner surface and the second inner surface. A first hollow tube is made of metal, and connects the first through hole and the second through hole.
Public/Granted literature
- US20220059432A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-02-24
Information query
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