Invention Grant
- Patent Title: Nonvolatile semiconductor memory device and fabrication method of the nonvolatile semiconductor memory device
-
Application No.: US17203172Application Date: 2021-03-16
-
Publication No.: US11963371B2Publication Date: 2024-04-16
- Inventor: Kotaro Noda
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Main IPC: H10B63/00
- IPC: H10B63/00 ; H01L23/00 ; H10N70/00

Abstract:
A certain embodiment includes: first wiring layers extended in a first direction and arranged in a second direction; second wiring layers provided above the first wiring layer of a third direction and arranged in the first direction and extended in the second direction; first stacked structures comprising a first memory cell disposed between the second and first wiring layers at a crossing portion between the second and first wiring layers; first conductive layers provided in the same layer as the first wiring layers, adjacent to the first wiring layer in the second direction, and not connected to other than the second wiring layer; second stacked structures disposed at crossing portions between the second wiring layers and the first conductive layers; and an insulation layer provided between the first stacked structures and between the second stacked structures having a Young's modulus larger than that of the insulation layer.
Public/Granted literature
Information query