Invention Grant
- Patent Title: Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory
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Application No.: US16971797Application Date: 2019-03-11
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Publication No.: US11963458B2Publication Date: 2024-04-16
- Inventor: Koichi Nishioka , Tetsuo Endoh , Shoji Ikeda , Hiroaki Honjo , Hideo Sato , Sadahiko Miura
- Applicant: TOHOKU UNIVERSITY
- Applicant Address: JP Miyagi
- Assignee: TOHOKU UNIVERSITY
- Current Assignee: TOHOKU UNIVERSITY
- Current Assignee Address: JP Miyagi
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- Priority: JP 18070254 2018.03.30
- International Application: PCT/JP2019/009734 2019.03.11
- International Announcement: WO2019/188203A 2019.10.03
- Date entered country: 2020-11-05
- Main IPC: H01L27/22
- IPC: H01L27/22 ; G11C11/16 ; H01L27/105 ; H01L29/82 ; H10B61/00 ; H10N50/01 ; H10N50/10 ; H10N50/80 ; H10N50/85
Abstract:
Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element.
The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).
The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).
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Information query
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