Invention Grant
- Patent Title: Deposition method and deposition apparatus
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Application No.: US16435749Application Date: 2019-06-10
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Publication No.: US11965246B2Publication Date: 2024-04-23
- Inventor: Naonori Fujiwara
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP 18119119 2018.06.22
- Main IPC: C23C16/52
- IPC: C23C16/52 ; C23C16/24 ; C23C16/40 ; C23C16/458
Abstract:
A method of depositing a film over a substrate covered with at least an insulating film provided with a groove is provided. In the method, a deposition process for depositing the film is performed by supplying at least a raw material gas to the substrate. The raw material gas is supplied while changing an amount of the raw material gas supplied per unit time.
Public/Granted literature
- US20190390346A1 DEPOSITION METHOD AND DEPOSITION APPARATUS Public/Granted day:2019-12-26
Information query
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