There are provided a method for testing failure of a memory, an apparatus for testing failure of a memory, a computer-readable storage medium, and an electronic device. The method for testing failure of a memory includes: writing preset storage data into a storage array of the memory (S310); raising a bit line voltage, and controlling a part of word lines of the storage array to enter a test mode (S320); exiting the test mode after waiting for preset time (S330); turning off sense amplifiers corresponding to a preset part of bit lines, and reading data from a remaining part of the bit lines (S340); comparing the data read from the remaining part of the bit lines with the preset storage data to obtain a comparison result (S350); and determining a failure state of the memory according to the comparison result (S360).