Invention Grant
- Patent Title: Thin film capacitor and manufacturing method therefor
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Application No.: US17559189Application Date: 2021-12-22
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Publication No.: US11967468B2Publication Date: 2024-04-23
- Inventor: Masahiro Hiraoka , Hitoshi Saita
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: YOUNG LAW FIRM, P.C.
- Priority: JP 20216643 2020.12.25
- Main IPC: H01G4/33
- IPC: H01G4/33 ; H01G4/008 ; H01G4/012 ; H01G4/10

Abstract:
Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film. The first capacitive electrode is made of less noble metal having a lower spontaneous potential than a metal constituting the second capacitive electrode. A minute defective portion existing in the capacitive insulating film is closed by an insulator derived from a metal constituting the first capacitive electrode.
Public/Granted literature
- US20220208477A1 THIN FILM CAPACITOR AND MANUFACTURING METHOD THEREFO Public/Granted day:2022-06-30
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