• Patent Title: Integrated native oxide device based on aluminum, aluminum alloys or beryllium copper (INOD) and discrete dynode electron multiplier (DDEM)
  • Application No.: US17262346
    Application Date: 2019-07-18
  • Publication No.: US11967494B2
    Publication Date: 2024-04-23
  • Inventor: Omar HadjarJoseph K. Hosea
  • Applicant: SKYFINIS, INC.
  • Applicant Address: US NC Pineville
  • Assignee: SKYFINIS, INC.
  • Current Assignee: SKYFINIS, INC.
  • Current Assignee Address: US NC Charlotte
  • Agency: Cozen O'Connor
  • International Application: PCT/US2019/042438 2019.07.18
  • International Announcement: WO2020/033119A 2020.02.13
  • Date entered country: 2021-01-22
  • Main IPC: H01J43/20
  • IPC: H01J43/20 H01J9/12
Integrated native oxide device based on aluminum, aluminum alloys or beryllium copper (INOD) and discrete dynode electron multiplier (DDEM)
Abstract:
Techniques produce integrated native metal oxide discrete elements which can be used to fabricate discrete dynode electron multiplier (DDEM) devices, for example by creating dynodes with a native oxide as secondary electron emissive (SEE) layer from a metal block. The metal block may comprise or consist of a metal base component, for example Al, Al alloys or BeCu, of metal oxide SEE materials Al2O3 or BeO. Growing a native oxide from these base metals, Al2O3 or BeO eliminates the need of a costly and time-consuming SEE coating on the dynode surface. Furthermore, aluminum alloys offer intrinsic dopant, in particular magnesium where its oxide provides a higher secondary electron yield than the aluminum oxide. The use of aluminum, its alloys or BeCu material block allows flexibility in design and fabrication of DDEM without an SEE coating process.
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