Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17596369Application Date: 2020-07-06
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Publication No.: US11967545B2Publication Date: 2024-04-23
- Inventor: Masashi Hayashiguchi
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: HSML P.C.
- Priority: JP 19130299 2019.07.12
- International Application: PCT/JP2020/026429 2020.07.06
- International Announcement: WO2021/010210A 2021.01.21
- Date entered country: 2021-12-08
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/00 ; H01L23/373 ; H01L25/07 ; H01L25/18

Abstract:
A semiconductor device includes a semiconductor element, a first terminal, a second terminal, a first conductor, a first connecting member, and a second connecting member. The semiconductor element includes a first electrode, a second electrode, and a third electrode, and is configured to perform on/off control between the first electrode and the second electrode based on a drive signal inputted to the third electrode. The first terminal and the second terminal are separated apart from each other and electrically connected to the first electrode. The first conductor is electrically connected to the first terminal. The first connecting member electrically connects the first electrode and the first conductor. The second connecting member electrically connects the first conductor and the second terminal.
Public/Granted literature
- US20220254758A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-08-11
Information query
IPC分类: