A light-emitting device includes: a first light-emitting element portion including: an n-side nitride semiconductor layer, a first light-emitting layer disposed on the n-side nitride semiconductor layer, and a first p-side nitride semiconductor layer disposed on the first light-emitting layer; a second light-emitting element portion including: a second light-emitting layer disposed on the n-side nitride semiconductor layer, and a second p-side nitride semiconductor layer disposed on the second light-emitting layer; an n-side electrode connected to the n-side nitride semiconductor layer; a first p-side electrode disposed on the first p-side nitride semiconductor layer via an upper n-type semiconductor layer disposed on the first p-side semiconductor layer; and a second p-side electrode connected to the second p-side nitride semiconductor layer. A composition of the second light-emitting layer is different from a composition of the first light-emitting layer.