Thin film transistor, method of manufacturing the same and display device
Abstract:
Embodiments of the present disclosure provide a thin film transistor, a method of manufacturing the same, and a display device. The thin film transistor includes a metal conductive pattern layer, an interlayer insulating layer, and a metal oxide layer; and the metal conductive pattern layer includes: a light shielding pattern, a source signal line, and/or a drain signal line; the metal oxide layer includes: a source electrode, a drain electrode, and an active layer. An orthographic projection of the active layer on the base substrate has an overlapping region with that of the light shielding pattern; the source electrode extends through the interlayer insulating layer to connect to the source signal line, and/or the drain electrode extends through the interlayer insulating layer to connect to the drain signal line.
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