Invention Grant
- Patent Title: Thin film transistor, method of manufacturing the same and display device
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Application No.: US17682239Application Date: 2022-02-28
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Publication No.: US11967620B2Publication Date: 2024-04-23
- Inventor: Pan Xu , Yicheng Lin , Cuili Gai , Ling Wang , Yongqian Li
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Westman, Champlin & Koehler, P.A.
- Priority: CN 1810579157.2 2018.06.06
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L27/12 ; H01L29/66 ; H01L29/786 ; H10K59/121 ; H10K59/126 ; H10K59/131 ; H01L21/44

Abstract:
Embodiments of the present disclosure provide a thin film transistor, a method of manufacturing the same, and a display device. The thin film transistor includes a metal conductive pattern layer, an interlayer insulating layer, and a metal oxide layer; and the metal conductive pattern layer includes: a light shielding pattern, a source signal line, and/or a drain signal line; the metal oxide layer includes: a source electrode, a drain electrode, and an active layer. An orthographic projection of the active layer on the base substrate has an overlapping region with that of the light shielding pattern; the source electrode extends through the interlayer insulating layer to connect to the source signal line, and/or the drain electrode extends through the interlayer insulating layer to connect to the drain signal line.
Public/Granted literature
- US20220181454A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE Public/Granted day:2022-06-09
Information query
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