Invention Grant
- Patent Title: Low noise and high-performance field effect transistors of 2-dimensional materials and methods to fabricate the same
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Application No.: US17253180Application Date: 2019-06-22
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Publication No.: US11967629B2Publication Date: 2024-04-23
- Inventor: Suprem R. Das , David B. Janes , Jiseok Kwon
- Applicant: Kansas State University Research Foundation , Purdue Research Foundation
- Applicant Address: US KS Manhattan
- Assignee: Kansas State University Research Foundation,Purdue Research Foundation
- Current Assignee: Kansas State University Research Foundation,Purdue Research Foundation
- Current Assignee Address: US KS Manhattan; US IN West Lafayette
- Agency: Hovey Williams LLP
- International Application: PCT/US2019/038619 2019.06.22
- International Announcement: WO2019/246601A 2019.12.26
- Date entered country: 2020-12-17
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/24 ; H01L29/43 ; H01L29/66 ; H01L29/76
Abstract:
A semiconductor device and methods of fabricating and using the same are provided. The semiconductor device comprises a channel region and at least a first, second, and third electrode. The channel region includes a compound having a transition metal and a chalcogen. The thickness of the channel region is about 3 to about 40 atomic layers.
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