Invention Grant
- Patent Title: Built-in bypass diode
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Application No.: US16918218Application Date: 2020-07-01
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Publication No.: US11967655B2Publication Date: 2024-04-23
- Inventor: Seung Bum Rim , David D. Smith
- Applicant: Maxeon Solar Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: Maxeon Solar Pte. Ltd.
- Current Assignee: Maxeon Solar Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L27/142 ; H01L31/0224 ; H01L31/0443 ; H01L31/0745

Abstract:
A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.
Public/Granted literature
- US20200335642A1 BUILT-IN BYPASS DIODE Public/Granted day:2020-10-22
Information query
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