- Patent Title: Puncture forming method, sample separating method, semiconductor element manufacturing method, semiconductor laser element manufacturing method, and semiconductor laser element
-
Application No.: US17061936Application Date: 2020-10-02
-
Publication No.: US11967797B2Publication Date: 2024-04-23
- Inventor: Daisuke Ikeda , Hideo Kitagawa , Hiroshi Asaka , Masayuki Ono
- Applicant: NUVOTON TECHNOLOGY CORPORATION JAPAN
- Applicant Address: JP Kyoto
- Assignee: NUVOTON TECHNOLOGY CORPORATION JAPAN
- Current Assignee: NUVOTON TECHNOLOGY CORPORATION JAPAN
- Current Assignee Address: JP Kyoto
- Agency: Rimon P.C.
- Priority: JP 18073502 2018.04.05
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/02 ; B23K26/0622 ; B23K26/082 ; B23K26/359 ; B23K26/386 ; B23K103/00 ; H01S5/042 ; H01S5/22 ; H01S5/323

Abstract:
A puncture forming method is a method of forming punctures in a sample by irradiating a surface of the sample with a light beam. The puncture forming method includes: forming a first puncture by irradiating a first position on the surface of the sample with a first pulse of the light beam; and after the forming of the first puncture, forming a second puncture which at least partially overlaps the first puncture by irradiating, with a second pulse of the light beam, a second position on the surface of the sample positioned away from the first position in a first direction. The second puncture has a tip which is positioned inside the sample and which is bent in a direction opposite to the first direction.
Public/Granted literature
Information query