A sputtering target and a method for fabricating an electronic device using the same are provided. A sputtering target may include a carbon-doped GeSbTe alloy, wherein, for the carbon-doped GeSbTe alloy, an average grain diameter of a GeSbTe alloy after sintering is in a range of 0.5 μm to 5 μm, and a first ratio of an average grain diameter of carbon after the sintering is Y (μm) to the average grain diameter of the GeSbTe alloy after the sintering may be in a range of greater than 0.5 and equal to or less than 1.5. Alternatively, for the carbon-doped GeSbTe alloy, a condition of Y=X×(Z/100) may be satisfied, where an average grain diameter of a GeSbTe alloy after sintering is X (μm), an average grain diameter of carbon after the sintering is Y (μm), and a content of carbon is Z (at %).