Invention Grant
- Patent Title: Atomic layer deposition system
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Application No.: US17682259Application Date: 2022-02-28
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Publication No.: US11976358B2Publication Date: 2024-05-07
- Inventor: Hsueh-Hsien Wu , Chih-Yuan Chan , Yi-Ting Lai
- Applicant: Syskey Technology Co., Ltd.
- Applicant Address: TW Hsinchu County
- Assignee: SYSKEY TECHNOLOGY CO., LTD.
- Current Assignee: SYSKEY TECHNOLOGY CO., LTD.
- Current Assignee Address: TW Hsinchu County
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: C23C16/455
- IPC: C23C16/455

Abstract:
An atomic layer deposition system is provided, including: a main body, a platform, a gas distribution showerhead assembly and a first ring member. The main body defines a reaction chamber, and the platform is located in the reaction chamber. The gas distribution showerhead assembly is disposed on the main body and includes at least one gas inlet channel and at least one gas diffusion plate. Each of the at least one gas diffusion plate includes a plurality of through holes. The first ring member defines a radial direction and is disposed between the platform and the at least one gas diffusion plate. A region of the at least one gas diffusion plate distributed with the plurality of through holes defines an outermost distribution profile. An inner circumferential wall of the first ring member and the outermost distribution profile keep a distance in the radial direction.
Public/Granted literature
- US20230272528A1 ATOMIC LAYER DEPOSITION SYSTEM Public/Granted day:2023-08-31
Information query
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