Invention Grant
- Patent Title: Method for selectively manufacturing material layer and target pattern
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Application No.: US17645077Application Date: 2021-12-20
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Publication No.: US11976364B2Publication Date: 2024-05-07
- Inventor: Tae Joo Park , Ji Won Han
- Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
- Applicant Address: KR Ansan-Si
- Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
- Current Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
- Current Assignee Address: KR Ansan-Si
- Agency: Finch & Maloney PLLC
- Priority: KR 20190074068 2019.06.21
- Main IPC: C23C16/56
- IPC: C23C16/56 ; C23C16/34 ; C23C16/40 ; C23C16/455 ; H01L21/02 ; H01L21/033 ; H01L21/3105 ; H01L21/311

Abstract:
A material layer manufacturing method is provided. The material layer manufacturing method may comprise the steps of: preparing a substrate having a base pattern formed thereon; providing a first precursor on the substrate having the base pattern formed thereon, in a state where a first voltage is applied to the base pattern; and providing a second precursor on the substrate having the first precursor provided thereon, in a state where a second voltage is applied to the base pattern, to form, on the substrate having the base pattern formed thereon, a material layer resulting from the reaction of the first precursor with the second precursor.
Public/Granted literature
- US20220145466A1 METHOD FOR SELECTIVELY MANUFACTURING MATERIAL LAYER AND TARGET PATTERN Public/Granted day:2022-05-12
Information query
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