Invention Grant
- Patent Title: Method for manufacturing a monocrystalline layer of GaAs material and substrate for epitaxial growth of a monocrystalline layer of GaAs material
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Application No.: US17816558Application Date: 2022-08-01
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Publication No.: US11976380B2Publication Date: 2024-05-07
- Inventor: Bruno Ghyselen
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: SOITEC
- Current Assignee: SOITEC
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR 00252 2018.03.28
- Main IPC: C30B29/32
- IPC: C30B29/32 ; C30B23/02 ; C30B25/18 ; C30B29/42 ; H01L21/02 ; H01L21/762
Abstract:
A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.
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