Invention Grant
- Patent Title: MEMS type semiconductor gas detection element
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Application No.: US17253024Application Date: 2019-08-02
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Publication No.: US11977043B2Publication Date: 2024-05-07
- Inventor: Hirokazu Mitsuhashi , Naganori Dogami
- Applicant: NEW COSMOS ELECTRIC CO., LTD.
- Applicant Address: JP Osaka
- Assignee: NEW COSMOS ELECTRIC CO., LTD.
- Current Assignee: NEW COSMOS ELECTRIC CO., LTD.
- Current Assignee Address: JP
- Agency: Ware, Fressola, Maguire & Barber LLP
- Priority: JP 18148446 2018.08.07
- International Application: PCT/JP2019/030567 2019.08.02
- International Announcement: WO2020/031909A 2020.02.13
- Date entered country: 2020-12-16
- Main IPC: G01N27/12
- IPC: G01N27/12 ; B81B3/00 ; G01N27/414 ; G01N33/00

Abstract:
The MEMS type semiconductor gas detection element of the invention is a MEMS type semiconductor gas detection element 1 having a MEMS structure, for detecting hydrogen gas, comprising: a substrate 2; a gas sensitive portion 3 mainly made of a metal oxide semiconductor and provided to the substrate 2; a heating portion 4 for heating the gas sensitive portion 3; an inactive film 5 having hydrogen-permselective and formed outside the gas sensitive portion 3; a protective film 6 formed outside the inactive film 5, for suppressing deterioration of the gas sensitive portion 3.
Public/Granted literature
- US20210116405A1 MEMS TYPE SEMICONDUCTOR GAS DETECTION ELEMENT Public/Granted day:2021-04-22
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