Invention Grant
- Patent Title: Memory anomaly processing method and system, electronic device, and storage medium
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Application No.: US17789953Application Date: 2020-08-21
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Publication No.: US11977744B2Publication Date: 2024-05-07
- Inventor: Shuangqing Li
- Applicant: INSPUR SUZHOU INTELLIGENT TECHNOLOGY CO., LTD.
- Applicant Address: CN Jiangsu
- Assignee: INSPUR SUZHOU INTELLIGENT TECHNOLOGY CO., LTD.
- Current Assignee: INSPUR SUZHOU INTELLIGENT TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Jiangsu
- Agency: Cooper Legal Group LLC
- Priority: CN 1911386480.9 2019.12.29
- International Application: PCT/CN2020/110362 2020.08.21
- International Announcement: WO2021/135272A 2021.07.08
- Date entered country: 2022-06-29
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A memory anomaly processing method and system, an electronic device, and a storage medium. The method includes: reading a memory error quantity of a target memory bank from a memory error register; when the memory error quantity is greater than a preset value, executing a hot-removal operation on the target memory bank; calculating a memory delay parameter, and writing the memory delay parameter into a memory controller, wherein the memory delay parameter is waiting time after the memory controller controls the target memory bank to receive a read/write command; and executing a hot-addition operation on the target memory bank, whereby the memory controller continues to execute a read/write operation on the target memory bank based on the memory delay parameter. It can be seen that, according to the present application, the memory read/write error rate may be reduced.
Public/Granted literature
- US20220391103A1 MEMORY ANOMALY PROCESSING METHOD AND SYSTEM, ELECTRONIC DEVICE, AND STORAGE MEDIUM Public/Granted day:2022-12-08
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