Invention Grant
- Patent Title: Memory device and memory system
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Application No.: US17324579Application Date: 2021-05-19
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Publication No.: US11977771B2Publication Date: 2024-05-07
- Inventor: Dae Sung Kim , Sung Ho Ahn , Sin Ho Yang , Jae Hyeong Jeong
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP&T GROUP LLP
- Priority: KR 20200159958 2020.11.25
- Main IPC: G06F16/00
- IPC: G06F16/00 ; G06F3/06 ; G06F11/10 ; G06F16/174 ; G11C7/10 ; G11C16/26 ; H03M7/30 ; H03M7/40 ; G11C11/56 ; G11C16/04

Abstract:
A memory device includes: a plurality of memory cells; soft read logic configured to generate soft data by reading data from the plurality of memory cells in response to a soft read command from a controller, the soft data including at least a major symbol and at least a minor symbol; a compressor configured to generate compressed data by: encoding, into a code alphabet having a second length, a major source alphabet including repetitions of the major symbol by a first length among a plurality of source alphabets included in the soft data, and encoding, into a code alphabet having a longer length than the second length, a minor source alphabet including repetitions of the major symbol by a shorter length than the first length and ending with one minor symbol; and an interface configured to provide the compressed data to the controller.
Public/Granted literature
- US20220164143A1 MEMORY DEVICE AND MEMORY SYSTEM Public/Granted day:2022-05-26
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