Invention Grant
- Patent Title: Method of erasing flash memory and electronic system
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Application No.: US17566253Application Date: 2021-12-30
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Publication No.: US11978520B2Publication Date: 2024-05-07
- Inventor: Jong Bae Jeong
- Applicant: WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: CN Hubei
- Assignee: WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: CN Hubei
- Agency: MUNCY, GEISSLER, OLDS & LOWE, PC
- Priority: CN 2110591334.0 2021.05.28
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/10 ; G11C16/14 ; G11C16/26

Abstract:
Each memory block in the flash memory is added with corresponding information bit(s) that store(s) information indicating whether erasure of the memory block has been completed before power-off. This allows easily finding out which memory block in the flash memory is undergoing an erase operation at the time of power-off. When the flash memory is powered on again, the information in the corresponding information bit(s) of the memory blocks may be read out and checked to determine whether there is any memory block of which the erasure had not been completed before the last power-off. If so, the memory blocks in the flash memory will be reprogrammed during the re-powering. This can avoid possible failure in reading data from some memory cells in the flash memory.
Public/Granted literature
- US20220383964A1 FLASH MEMORY, METHOD OF ERASING THE SAME AND ELECTRONIC SYSTEM Public/Granted day:2022-12-01
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