Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
-
Application No.: US17983131Application Date: 2022-11-08
-
Publication No.: US11978623B2Publication Date: 2024-05-07
- Inventor: Yoshitomo Hashimoto , Katsuyoshi Harada , Kimihiko Nakatani , Yoshiro Hirose , Masaya Nagato , Takashi Ozaki , Tomiyuki Shimizu
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JP 19158563 2019.08.30
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
There is provided a technique that includes: forming an oxide film containing an atom X of a precursor on a substrate by performing a cycle a predetermined number of times. The cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the atom X on the substrate by supplying the precursor having a molecular structure in which the first and second groups are bonded to the atom X, to the substrate, the first group containing an alkoxy group, and the second group containing at least one of an amino group, an alkyl group, a halogeno group, a hydroxy group, a hydro group, an aryl group, a vinyl group, and a nitro group; and (b) forming a second layer containing the atom X by supplying an oxidizing agent to the substrate to oxidize the first layer.
Public/Granted literature
- US20230067218A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Public/Granted day:2023-03-02
Information query
IPC分类: